? 2018 ixys corporation, all rights reserved ds100523b(1/18) high voltage power mosfet features ? high voltage package ? fast intrinsic diode ? avalanche rated ? molding epoxies meet ul 94 v-0 flammability classification ? high blocking voltage advantages ? easy to mount ? space savings ? high power density applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits IXTA3N150HV v dss = 1500v i d25 =3a r ds(on) ? ? ? ? ? 7.3 ? ? ? ? ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 1500 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 1500 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c3a i dm t c = 25 ? c, pulse width limited by t jm 9a i a t c = 25 ? c3a e as t c = 25 ? c 250 mj dv/dt i s ? i dm , v dd ? v dss ,t j ? 150 ? c 5 v/ns p d t c = 25 ? c 250 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c weight 2.5 g symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 1500 v v gs(th) v ds = v gs , i d = 250 ? a 2.5 5.0 v i gss v gs = ? 30v, v ds = 0v ????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 100 ?? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 7.3 ? n-channel enhancement mode avalanche rated fast intrinsic diode g = gate d = drain s = source tab = drain g s to-263 d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N150HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 2.2 3.6 s c iss 1375 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 90 pf c rss 30 pf t d(on) 19 ns t r 21 ns t d(off) 42 ns t f 25 ns q g(on) 38.6 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 6.5 nc q gd 19.0 nc r thjc 0.50 ?? c/w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. i s v gs = 0v 3 a i sm repetitive, pulse width limited by t jm 12 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 0.9 s i rm 15.0 a q rm 6.7 ? c resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 ? (external) i f = i d = 0.5 ? i d25 , -di/dt = 100a/ ? s v r = 100v, v gs = 0v to-263 (hv) outline pin: 1 - gate 2 - source 3 - drain
? 2018 ixys corporation, all rights reserved IXTA3N150HV fig. 1. output characteristics @ t j = 25 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 16 20 24 28 32 v ds - volts i d - amperes v gs = 10v 7v 4v 5.5v 5v 6v fig. 2. output characteristics @ t j = 125 o c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 4v 5v fig. 3. r ds(on) normalized to i d = 1.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 3a i d = 1.5a fig. 4. r ds(on) normalized to i d = 1.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 6. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c v ds = 20v fig. 5. maximum drain current vs. case temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTA3N150HV ixys ref: t_3n150(4n)5-02-16-b fig. 7. transconductance 0 1 2 3 4 5 6 7 0.00.51.01.52.02.53.03.5 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c v ds = 20v fig. 8. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 0.30.40.50.60.70.80.91.0 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 9. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 750v i d = 1.5a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 12. forward-bias safe operating area 0.01 0.1 1 10 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c single pulse 25 s 1ms 100 s r ds(on) limit 10ms dc 100ms
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